通讯
系统概述
随着云连接和5G技术的市场需求不断增加，新的电信基础设施的能源消耗也在成倍增长，推动了对电信基础设施的电源管理和电力分配效率的需求。而且能源法规越来越严苛，成本和能效变得尤为重要。整个电源系统必须具有高能效和高密度，以提供所需的高水平性能。 芯迈推出的Super-Junction MOSFET&Split Gate Trench MOSFET 系列产品全面提升了器件的开关特性和导通特性，通过功能性升级与工艺技术优化来降低总体成本。具有较强的ESD能力、电流关断能力、短路能力，具有更低的栅极电阻，可以满足客户高能效高可靠性的需求。
典型系统应用框图
产品推荐
| Part No. | Package | Vds_max (V) | Vg=10V | Vth_typ.(V) | Vgs_max(V) | Qg_Vgs=10V | IDS_Max(A) | Status | |
|---|---|---|---|---|---|---|---|---|---|
| Typ | Max | ||||||||
| SDN10N4P9S2B | TO263-3 | 100 | 3.7 | 4.9 | 3 | ±20 | 76 | 117 | Release |
| SDN10N4P9S2C | PDFN5*6-8 | 100 | 3.6 | 4.9 | 3 | ±20 | 77 | 80 | Release |
| SDN10N4P2S2B | TO263-3 | 100 | 3.8 | 4.2 | 3 | ±20 | 78 | 117 | Release |
| SDN10N4P2S2C | PDFN5*6-8 | 100 | 3.6 | 4.2 | 3 | ±20 | 77 | 80 | Release |
| SDN10N004S2C | PDFN5*6-8 | 100 | 3.1 | 4 | 3 | ±20 | 102 | 135 | Release |
| SDN10N004S2B | TO263-3 | 100 | 3.2 | 4 | 3 | ±20 | 102 | 136 | Release |
| SDN10N3P5S2B | TO263-3 | 100 | 3.1 | 3.5 | 3 | ±20 | 102 | 136 | Release |
| SDN10N2P7S2B | TO263-3 | 100 | 2.4 | 2.7 | 3 | ±20 | 150 | 166 | Release |
| SDN10N1P5S2T | TOLL-8 | 100 | 1.1 | 1.5 | 3 | ±20 | 258 | 330 | Release |
| SDN06L1P3S4C | PDFN5*6-8 | 60 | 0.9 | 1.3 | 1.6 | ±20 | 100 | 250 | Sample available |
| SDA04N0P9S1F | TO263-7 | 40 | 0.7 | 0.95 | 3.4 | ±20 | 117 | 240 | Sample available |
| SDA04N0P6F-AA | TO263-7 | 40 | 0.6 | 0.8 | 3 | ±20 | 130 | 240 | Sample available |
| SDH65N065J2W | TO247-3 | 650 | 56 | 65 | 3 | ±30 | 78 | 36 | 2023 Q1 |
| SDH65N070W-AA | TO247-3 | 650 | 58 | 70 | 3 | ±30 | 78 | 36 | 2023 Q3 |
| SDH65N038W-AA | TO247-3 | 650 | 35 | 38 | 3.5 | ±30 | 136 | 80 | 2023 Q1 |
| SDH65N038W-AB | TO247-3 | 650 | 35 | 38 | 4 | ±30 | 150 | 65 | 2023 Q3 |
| SDNA2N030E3J | TO247-4 | 1200 | 30Vgs=18V | 42Vgs=18V | 2.5 | 22/-8 | 150 | 56 | 2023 Q2 |
| SDHA2N075J-AA | TO247-4 | 1200 | 75Vgs=15V | 97.5Vgs=15V | 2.8 | 22/-8 | 90 | 32 | 2023 Q2 |