系统概述
随着云连接和5G技术的市场需求不断增加,新的电信基础设施的能源消耗也在成倍增长,推动了对电信基础设施的电源管理和电力分配效率的需求。而且能源法规越来越严苛,成本和能效变得尤为重要。整个电源系统必须具有高能效和高密度,以提供所需的高水平性能。 芯迈推出的Super-Junction MOSFET&Split Gate Trench MOSFET 系列产品全面提升了器件的开关特性和导通特性,通过功能性升级与工艺技术优化来降低总体成本。具有较强的ESD能力、电流关断能力、短路能力,具有更低的栅极电阻,可以满足客户高能效高可靠性的需求。
典型系统应用框图
产品推荐
Part No. | Package | Vds_max(V) | Rds(on)(mΩ)_25°C | Vth_typ.(V) | Vgs_max(V) | Qg_Vgs=10V(nC) | IDS_Max(A) | Status | |
---|---|---|---|---|---|---|---|---|---|
Vg=10V | |||||||||
Typ | Max | ||||||||
SDH15N9P3C-AB | PDFN5*6 | 150 | 7.9 | 9.3 | 3 | ±20 | 33 | 79 | Release |
SDH03L2P1E-AA | PDFN3.3*3.3 | 30 | 1.6 | 2.2 | 1.6 | ±20 | 37.5 | 72 | Sample |
SDH03L0P7CA-AA | PDFN5*6 | 30 | 0.55 | 0.68 | 1.6 | ±20 | 118 | 358 | Release |
SDH15N5P1A-AA | TO220 | 150 | 4 | 5.1 | 3 | ±20 | 65 | 140 | Release |
SDH15N7P5A-AB | TO220 | 150 | 6.3 | 7.5 | 3.4 | ±20 | 56 | 130 | Sample |
SDH10N2P9A-AB | TO220 | 100 | 2.3 | 2.9 | 3 | ±20 | 176 | 175 | Release |
SDH10N3P6TA-AA | TO220 | 100 | 3.2 | 3.6 | 3 | ±20 | 138 | 236 | Sample |
SDN10K012CN-AA | PDFN5*6 | 100 | 9.2 | 12 | 1.8 | ±20 | 17.2 | 43 | Release |
SDN08N2P6C-AB | PDFN5*6 | 80 | 2 | 2.6 | 3 | ±20 | 90 | 180 | Release |
SDH10N1P5T-AC | TOLL | 100 | 1.2 | 1.5 | 3 | ±20 | 260 | 330 | Release |
SDH10N2P7B-AB | TO263-3 | 100 | 2.4 | 2.7 | 3 | ±20 | 140 | 175 | Release |
SDH08K4P6VN-AA | PDFN3.3x3.3 DSC | 80 | 3.5 | 4.6 | 1.7 | ±20 | 41.1 | 100 | Sample |
SCHA2N040JN-AA | TO247 | 1200 | 40 | 56 | 3 | -10/+22 | 62 | 57 | Release |
SCHA2N016JN-AA | TO247 | 1200 | 18 | 25.2 | 3 | -10/+22 | 169 | 118 | Release |
SCH65N027QN-AA | TOLL | 650 | 27 | 38 | 2.7 | -8/+22 | 98 | 84 | Release |
SCH65N045QN-AA | TOLL | 650 | 45 | 63 | 2.7 | -8/+22 | 49.7 | 50 | Release |