产品介绍
超结MOSFET通过优化器件结构设计，采用先进的工艺制造技术，进一步提高了产品性能。其具有更快的开关速度，更低的导通损耗，极低的栅极电荷，从而降低了器件的功率损耗，提高系统效率。
特点优势
超结系列产品具有更优的雪崩耐量和ESD能力，提高了器件应用中的可靠性，同时优化了器件的开关特性， 使其在系统应用中具有更好的EMI表现，为系统设计提供更大的余量。
应用领域
通信电源，充电桩，储能。
产品列表
| Part No. | Package | Vds_ max (V) | Rds(on)(mΩ)_25°C V | Vth_ typ.(V) | Vgs_ max(V ) | Qg_ Vgs=1 0V (nC) | Qgs (nC) | Qgd (nC) | IDS_ Max(A ) | Status | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Vg=10V | |||||||||||
| Typ | Max | ||||||||||
| SDN70N760J2A | TO220-3 | 700 | 660 | 760 | 3 | ±20 | 9.5 | 1.5 | 4.5 | 7 | Sample available |
| SDN65N2K4J2O | SOP-8 | 650 | 2100 | 2400 | 3 | ±20 | 4.4 | 0.4 | 3.0 | 0.9 | Sample available |
| SDN65N1K9J2A | TO220-3 | 650 | 1550 | 1900 | 3 | ±20 | 5.2 | 0.6 | 3.3 | 2.4 | Sample available |
| SDN65N1K2J2H | SOT223-3 | 650 | 1050 | 1200 | 3 | ±20 | 6.5 | 0.9 | 3.5 | 1.4 | Sample available |
| SDN65N1K2J2A | TO220-3 | 650 | 1050 | 1200 | 3 | ±20 | 6.5 | 0.9 | 3.5 | 1.4 | Sample available |
| SDN65N380P-AA | TO220F-3 | 650 | 260 | 380 | 3 | ±20 | 19.0 | 3.3 | 7.0 | 12.5 | Sample available |
| SDN65N280J2D | TO252-3 | 650 | 230 | 280 | 3 | ±20 | 23.0 | 4.0 | 7.6 | 11.8 | Sample available |
| SDN65N250J2P | TO220F-3 | 650 | 210 | 250 | 3 | ±20 | 24.0 | 4.5 | 7.0 | 11.5 | Sample available |
| SDN65N250J2D | TO252-3 | 650 | 210 | 250 | 3 | ±20 | 24.0 | 4.5 | 7.0 | 15.4 | Sample available |
| SDN65N250J2S | DFN8*8-4 | 650 | 210 | 250 | 3 | ±20 | 23.0 | 4.0 | 8.5 | 11.5 | Sample available |
| SDN60N2K0J2A | TO220-3 | 600 | 1740 | 2000 | 3 | ±20 | 3.9 | 0.4 | 3.0 | 3 | Sample available |
| SDN60N2K0J2O | SOP-8 | 600 | 1740 | 2000 | 3 | ±20 | 3.9 | 0.4 | 3.0 | 3 | Sample available |
| SDN50N1K8J2H | SOT223-3 | 500 | 1500 | 1800 | 3 | ±20 | 5.4 | 0.5 | 4.0 | 2.8 | Sample available |